leshan radio company, ltd. general purpose transistors maximum ratings rating symbol max unit collector-emitter voltage v ceo 25 v collector-base voltage v cbo 40 v emitter-base voltage v ebo 5v collector current-continuoun i c 800 madc thermal characteristics characteristic symbol max unit total device dissipation fr-5 board,(1) p d t a =25c 225 mw derate above 25c 1.8 mw/c thermal resistance,junction to ambient r ja 556 c/w total device dissipation p d alumina substrate,(2) ta=25c 300 mw derate above 25c 2.4 mw/c thermal resistance,junction to ambient r ja 417 c/w junction and storage temperature t j, t s t g -55 to +150 c 1 3 2 sot?23 1 base 2 emitter collector 3 feature ? high current capacity in compact package. i c = 0.8a. ? epitaxial planar type. ? npn complement: l8050 ? pb-free package is available. device marking and ordering information device marking l8050plt1g s-l8050plt1g 80p l8050plt3g 80p l8050qlt1g s-l8050qlt1g 1yc l8050qlt3g 1yc shipping 3000/tape&reel 10000/tape&reel 3000/tape&reel 10000/tape&reel npn silicon l8050rlt1g s-l8050rlt1g 1ye l8050rlt3g 1ye 80s 3000/tape&reel 10000/tape&reel 3000/tape&reel 10000/tape&reel 80s l8050slt1g l8050slt3g s-l8050plt1g series 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. rev.o 1/4 l8050plt1g series ? s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. s-l8050plt3g s-l8050qlt3g s-l8050rlt3g s-l8050slt1g s-l8050slt3g
leshan radio company, ltd. electrical characteristics (t a =25c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector-emitter breakdown voltage v (br)ceo 25 ?? v (i c =1.0ma) emitter-base breakdown voltage v (br)ebo 5 ?? v (i e =100 ? ) collector-base breakdown voltage v (br)cbo 40 ?? v (i c =100 ? ) collector cutoff current (v cb =35v) i cbo ? ? 150 na emitter cutoff current (v eb =4v) i ebo ? ? 150 na note : * pqrs h fe 100~200 150~300 200-400 300-600 electrical characteristics (t a =25c unless otherwise noted) charateristic unit dc current gain i c =100ma, v c e =1v h fe 100 - 600 collector-emitter saturation voltage ( i c v ce(sat) - - symbol min typ max 0. 5 v = 80 0ma, = 80 ma) i b l8050plt1g series rev.o 2/4 s-l8050plt1g series
leshan radio company, ltd. fig.5 - capacitance & reverse-biased voltage 1 10 100 0.1 1 10 100 reverse-biased voltage (v) capacitance (pf) cob fig.4 - cutoff frequency & collector current 1 10 100 1000 1 10 100 1000 collector current (ma) cutoff frequency (mhz) v ce =10v fig.3 - on voltage & collector current 0.1 1 0.01 0.1 1 10 100 1000 collector current (ma) on voltage (v) v be(on) @ v ce =1v fig.1 - current gain & collector current 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 collector current (ma) hfe v ce =1v fig.2 - saturation voltage & collector current 0.01 0.1 1 0.01 0.1 1 10 100 1000 collector current (ma) saturation voltage (v) v ce(sat) @ i c =10i b rev.o 3/4 l8050plt1g series s-l8050plt1g series
leshan radio company, ltd. notes: 1. dimensioning and tolerancing per ansi y14.5m,1982 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 pin 1. base 2. emitter 3. collector sot - 23 d j k l a c b s h g v 12 3 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 rev.o 4/4 l8050plt1g series s-l8050plt1g series
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